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IEICE Trans

Laurence CONSIDINE

Prospective for Gallium Nitride-Based Optical Waveguide Modulators
Arnaud STOLZ Laurence CONSIDINE Elhadj DOGHECHE Didier DECOSTER Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1363-1368
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium-nitride, electro-optic, optical waveguide, optoelectronics, 
 Summary | Full Text:PDF
DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1348-1353
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium Nitride, Schottky diode, varactor, multiplier, 
 Summary | Full Text:PDF
Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlN, AlN/GaN MISFET, AlN/GaN HFET, wide-bandgap, frequency-dispersion, 
 Summary | Full Text:PDF