Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C
No. 11
pp. 1564-1581
Type of Manuscript:
INVITED PAPER (Special Issue on LSI Memories) Category: Keyword: capacitor, dielectrics, Si3N4, Ta2O5, high permittivity materials, 256 Mbit, 1 Gbit, DRAM, |