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IEICE Trans

Kazuki MASHIMO

4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
Kazuki MASHIMO Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2018/10/01
Vol. E101-C  No. 10  pp. 751-758
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
power amplifier, high efficiency, band selective, GaN HEMT, PIN diode, 
 Summary | Full Text:PDF