Kazuki MASHIMO


4.5-/4.9-GHz-Band Selective High-Efficiency GaN HEMT Power Amplifier by Characteristic Impedance Switching
Kazuki MASHIMO Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   
Publication Date: 2018/10/01
Vol. E101-C  No. 10  pp. 751-758
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
power amplifierhigh efficiencyband selectiveGaN HEMTPIN diode
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