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IEICE Trans

Kazuhiro MOCHIZUKI

Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 943-948
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
heterojunction bipolar transistor, reliability, rapid thermal annealing, GaAs, InGaP, 
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