Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-CNo. 5pp. 776-779 Type of Manuscript: Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: random telegraph signal noise, FN stress, flash memory, MOSFET,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 968-972 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: trap depth, RTN, time constants, poly gate depletion effect, surface potential variation,