Keyword : FN stress

New Multiple-Times Programmable CMOS ROM Cell
In-Young CHUNG Seong Yeol JEONG Sung Min SEO Myungjin LEE Taesu JANG Seon-Yong CHA Young June PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/06/01
Vol. E95-C  No. 6 ; pp. 1098-1103
Type of Manuscript:  PAPER
Category: Integrated Electronics
CMOS memoryROMFN stressnonvolatile memory
 Summary | Full Text:PDF

FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Hochul LEE Youngchang YOON Ickhyun SONG Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 776-779
Type of Manuscript:  Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
random telegraph signal noiseFN stressflash memoryMOSFET
 Summary | Full Text:PDF