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IEICE Trans

Hisham Z. MASSOUD

C-V Measurement and Simulation of Silicon-Insulator-Silicon (SIS) Structures for Analyzing Charges in Buried Oxides of Bonded SOI Materials
Kiyoshi MITANI Hisham Z. MASSOUD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1421-1429
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers
Keyword: 
silicon-insulator-silicon (SIS) structure, C-V simulation, negative charge, charge distribution, bonding seam, wafer bonding, 
 Summary | Full Text:PDF