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IEICE Trans

Hironori RYOUKE

Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs--Effects of Substrate Impurity
Yoshinari KAMAKURA Hironori RYOUKE Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 357-362
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
Monte Carlo simulation, molecular dynamics, mobility, screening, MOSFET, 
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