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IEICE Trans

Hem VAIDYA

Modeling and Simulation of Tunneling Current in MOS Devices Including Quantum Mechanical Effects
Andrea GHETTI Jeff BUDE Paul SILVERMAN Amal HAMAD Hem VAIDYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1175-1182
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
modeling and simulation, quantum mechanical effects, tunneling current, ultra-thin oxides, 
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