Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-CNo. 8 ;
pp. 1175-1182 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Gate Tunneling Simulation Keyword: modeling and simulation, quantum mechanical effects, tunneling current, ultra-thin oxides,