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IEICE Trans

Hao-Hsiung LIN

High Power In0.49Ga0.51P/In0.15Ga0.85As Heterostructure Doped-Channel FETs
Hsien-Chin CHIU Shih-Cheng YANG Yi-Jen CHAN Hao-Hsiung LIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1312-1317
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
DCFET, InGaP, power, performance, RIE, 
 Summary | Full Text:PDF