Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 937-942 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Compound Semiconductor and Power Devices Keyword: power VDMOSFET, shallow dual well, gate charge, avalanche breakdown,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/05/01 Vol. E89-CNo. 5pp. 591-595 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Si Devices and Processes Keyword: Power MOSFET, closed cell, wing cell, gate-drain charge (Qgd),
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-CNo. 4pp. 694-698 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Power Devices Keyword: Power MOSFET, unclamped inductive load switching (UIS), ruggedness,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-CNo. 10pp. 1306-1311 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: doped-channel EFTs, Al0.3Ga0.7As/In0.15Ga0.85As, device linearity,