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IEICE Trans

Changhwan SHIN

Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance Karam CHO Jaesung JO Changhwan SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 544-546 Type of Manuscript: BRIEF PAPER Category: Keyword: negative capacitance, subthreshold slope, a-IZO, TFT,
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Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method Sangheon OH Changhwan SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 541-543 Type of Manuscript: BRIEF PAPER Category: Keyword: random variation, FinFET, SRAM, worst-case sampling,
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