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IEICE Trans

Andreas SCHOLZE

Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1242-1246
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
single-electron tunneling, Coulomb blockade, conductance oscillations, transfer Hamiltonian formalism, 
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