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Vol.E69-E No.4
pp.279-282
Special SectionLETTER
Compound Semiconductor Devices
Numerical Analysis of Energy Transport Effects in an AlGaAs/GaAs Heterojunction Bipolar Transistor
Kazushige HORIO, Hisayoshi YANAI, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.283-285
Special SectionLETTER
Compound Semiconductor Devices
Transient Analysis of Collector-top HBTs Based on the Numerical Device Model
Junko AKAGI, Mamoru KURATA, Jiro YOSHIDA, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.286-287
Special SectionLETTER
Compound Semiconductor Devices
Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates
Yoshiki YAMAUCHI, Tadao ISHIBASHI, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.288-290
Special SectionLETTER
Compound Semiconductor Devices
Gate Current Model for Heterostructure MISFETs
Shuichi FUJITA, Takashi MIZUTANI, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.291-293
Special SectionLETTER
Compound Semiconductor Devices
Gate-bias Dependence of the Noise Spectrum of GaAs MESFETs
Sumihisa HASHIGUCHI, Tsuyoshi KOIKE, Hideki OHKUBO, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.294-295
Special SectionLETTER
Compound Semiconductor Devices
Extremely Low-Noise HEMT Fabricated on MOCVD Epi-Wafer
Hisao KAWASAKI, Ichirou INAMI, Atsushi TANAKA, Hirokuni TOKUDA, Mitsugu HIGASHIURA, Shigekazu HORI, Kiyoho KAMEI, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.296-298
Special SectionLETTER
Compound Semiconductor Devices
A GaAs Monolithic High-Frequency Modulator IC for Laser-Diode Noise Suppression
Tatsuo OTSUKI, Tsuyoshi TANAKA, Noriyuki YOSHIKAWA, Akio SHIMANO, Hiromitsu TAKAGI, Gota KANO, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.299-301
Special SectionLETTER
Compound Semiconductor Devices
GaAs Universal Multiplexer/demultiplexer using LSCFL
Tohru TAKADA, Kazuhiko NOZAWA, Masao IDA, Kazuyoshi ASAI, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.302-304
Special SectionLETTER
Compound Semiconductor Devices
High Speed GaAs 8 b ALU
Masayuki INO, Tohru TAKADA, Masao IDA, Naoki KATO, |
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Summary | Full Text:PDF | |
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Vol.E69-E No.4
pp.305-307
Special SectionLETTER
Compound Semiconductor Devices
Analysis of Layer Number Dependence of Response Time and Current Gain of Resonant Electron Transfer Triode
Yasuyuki NAKATA, Masahiro ASADA, Yasuharu SUEMATSU, Mitsunobu SATO, |
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Summary | Full Text:PDF | |
| Current List: 42971 - 42980
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