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Vol.E71-E No.4
pp.268-271
Special SectionLETTER
Components and Materials
A Measurement on the Relationship between Metallic Phase Arc Duration and Electrode Mass Change in Ag Contacts
Hideaki SONE, Masao NAKAI, Tasuku TAKAGI, |
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Vol.E71-E No.4
pp.272-273
Special SectionLETTER
Components and Materials
An Experiment on a Relationship between Contact Voltage and Thermal Deformation of Contact Spring
Masanari TANIGUCHI, Masato OKI, Tasuku TAKAGI, |
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Summary | Full Text:PDF | |
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Vol.E71-E No.4
pp.274-275
Special SectionLETTER
Components and Materials
Basic Characteristics of Solution in the Growth of Urea Single Crystal
Osamu SHIMOMURA, Hidetoshi ARII, Mituhiro KURODA, |
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Summary | Full Text:PDF | |
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Vol.E71-E No.4
pp.276-277
Special SectionLETTER
Components and Materials
Analysis of Steady Arc Products on Ag/Pd Contacts
Makoto HASEGAWA, Koichiro SAWA, Kunio MIYACHI, |
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Summary | Full Text:PDF | |
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Vol.E71-E No.4
pp.278-279
Special SectionLETTER
Components and Materials
Occurrence Frequencies of Microarcs Caused by Carbon Sliding-Contacts
Souichi TSUKAMOTO, Osamu FUJIWARA, Kazuo KATOH, Takashi AZAKAMI, |
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Summary | Full Text:PDF | |
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Vol.E71-E No.4
pp.280-282
Special SectionLETTER
Components and Materials
A New Method of Estimating Discontact Rate of Pantograph Using Noise Currents in Arc Discharge
Kohji YAMASHITA, Osamu FUJIWARA, Takashi AZAKAMI, |
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Summary | Full Text:PDF | |
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Vol.E71-E No.4
pp.283-285
Special SectionLETTER
Superconductivity Electronics
Superconducting Y-Ba-Cu Oxide Films as-Grown by RF Diode Sputtering
Mikihiro WATANABE, Atsushi MATACHI, Teruo ISHIBASHI, Atsushi NOYA, Shinya KURIKI, |
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Vol.E71-E No.4
pp.286-288
Special SectionLETTER
Semiconductor Devices and Integrated Circuits
Proposal of Electron Diffraction Transistor
Kazuhito FURUYA, Kenji KURISHIMA, Tsuyoshi YAMAMOTO, |
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Vol.E71-E No.4
pp.289-291
Special SectionLETTER
Semiconductor Devices and Integrated Circuits
High Performance and Versatile Bi-CMOS Electronic Volume IC
Yasuhiro SUGIMOTO, Hiromi MAFUNE, Hiroshi SHIOBARA, |
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Summary | Full Text:PDF | |
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Vol.E71-E No.4
pp.292-294
Special SectionLETTER
Semiconductor Devices and Integrated Circuits
Growth of GaN Films on Sapphire Substrates by Low Pressure Metalorganic Vapor-Phase Epitaxy--Effect of Surface Treatment--
Takao NAGATOMO, Keiichi KOHAMA, Katsuhiko MIKAMI, Osamu OMOTO, |
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Summary | Full Text:PDF | |
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Current List: 42651 - 42660
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