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Vol.E78-C No.3
pp.236-240
Special SectionPAPER
A Flexible and Low-Cost ASIC Line Management Technology Taking Operator's Skill-Level as a Scheduling-Factor into Consideration
Tetsuma SAKURAI, Satoshi TAZAWA, Eisuke ARAI, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.241-247
Special SectionPAPER
An On-Line Scheduler for ASIC Manufacturing Line Management
Tadao TAKEDA, Satoshi TAZAWA, Kou WADA, Eisuke ARAI, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.248-254
Special SectionPAPER
Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
Toshimasa MATSUOKA, Shigenari TAGUCHI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Seizo KAKIMOTO, Junkou TAKAGI, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.255-260
Special SectionPAPER
Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
Tohru MOGAMI, Lars E. G. JOHANSSON, Isami SAKAI, Masao FUKUMA, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.261-266
Special SectionPAPER
Plasma-Induced Transconductance Degradation of nMOSFET with Thin Gate Oxide
Koji ERIGUCHI, Masatoshi ARAI, Yukiharu URAOKA, Masafumi KUBOTA, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.267-273
Special SectionPAPER
0.15 µm CMOS Devices with Reduced Junction Capacitance
Akira TANABE, Kiyoshi TAKEUCHI, Toyoji YAMAMOTO, Takeo MATSUKI, Takemitsu KUNIO, Masao FUKUMA, Ken NAKAJIMA, Naoki AIZAKI, Hidenobu MIYAMOTO, Eiji IKAWA, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.274-280
Special SectionPAPER
Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
Ken-ichiro SONODA, Mitsuru YAMAJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI, Tatsuya KUNIKIYO, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.281-287
Special SectionPAPER
A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
Koichi FUKUDA, Kenji NISHI, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.288-292
Special SectionPAPER
The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs
Hidetoshi OGIHARA, Masaki YOSHIMARU, Shunji TAKASE, Hiroki KUROGI, Hiroyuki TAMURA, Akio KITA, Hiroshi ONODA, Madayoshi INO, |
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Summary | Full Text:PDF | |
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Vol.E78-C No.3
pp.293-298
Special SectionPAPER
Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices
Yasuo NARA, Manabu DEURA, Ken-ichi GOTO, Tatsuya YAMAZAKI, Tetsu FUKANO, Toshihiro SUGII, |
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Summary | Full Text:PDF | |
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