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Vol.E79-C No.2
pp.145-151
Special SectionPAPER
Device and Circuit Characterization
A Novel Threshold Voltage Distribution Measuring Technique for Flash EEPROM Devices
Toshihiko HIMENO, Naohiro MATSUKAWA, Hiroaki HAZAMA, Koji SAKUI, Masamitsu OSHIKIRI, Kazunori MASUDA, Kazushige KANDA, Yasuo ITOH, Jin-ichi, MIYAMOTO, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.152-157
Special SectionPAPER
Device and Circuit Characterization
Effects of Field Edge Steps on Electrical Gate Linewidth Measurements
Naoki KASAI, Ichiro YAMAMOTO, Koji URABE, Kuniaki KOYAMA, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.158-164
Special SectionPAPER
Device and Circuit Characterization
Test Structures and a Modified Transmission Line Pulse System for the Study of Electrostatic Discharge
Robert A. ASHTON, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.165-171
Special SectionPAPER
Device and Circuit Characterization
Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors
Masamichi TANABE, Hiromi SHIMAMOTO, Takahiro ONAI, Katsuyoshi WASHIO, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.172-178
Special SectionPAPER
Device and Circuit Characterization
Electrical Characteristics of n- and p-MOSFETs with Gates Crossing Source/Drain Regions at 90 and 45
Takashi OHZONE, Naoko MATSUYAMA, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.179-184
Special SectionPAPER
Device and Circuit Characterization
Evaluation of Soft-Error Immunity for 1-V CMOS Memory Cells with MTCMOS Technology
Takakuni DOUSEKI, Shin'ichiro MUTOH, Takemi UEKI, Junzo YAMADA, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.185-191
Special SectionPAPER
SOI & Material Characterization
Modeling of Leak Current Characteristics in High Frequency Operation of CMOS Circuits Fabricated on SOI Substrate
Hiroshi ITO, Kunihiro ASADA, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.192-197
Special SectionPAPER
SOI & Material Characterization
Test Structure for the Evaluation of Si Substrates
Yoshiko YOSHIDA, Mikihiro KIMURA, Morihiko KUME, Hidekazu YAMAMOTO, Hiroshi KOYAMA, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.198-205
Special SectionPAPER
Reliability Analysis
Quantitative Charge Build-Up Evaluation Technique by Using MOS Capacitors with Charge Collecting Electrodes in Wafer Processing
Hiroki KUBO, Takashi NAMURA, Kenji YONEDA, Hiroshi OHISHI, Yoshihiro TODOKORO, |
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Summary | Full Text:PDF | |
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Vol.E79-C No.2
pp.206-210
Special SectionPAPER
Reliability Analysis
Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure
Masafumi KATSUMATA, Jun-ichi MITSUHASHI, Kiyoteru KOBAYASHI, Yoji MASHIKO, Hiroshi KOYAMA, |
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Summary | Full Text:PDF | |
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