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Vol.E81-C No.6
pp.827-833
Special SectionPAPER
Functional Modules and the Design Technology
Development of K-Band Front-End Devices for Broadband Wireless Communication Systems Using Millimeter-Wave Flip-Chip IC Technology
Kazuaki TAKAHASHI, Suguru FUJITA, Hiroyuki YABUKI, Takayuki YOSHIDA, Yoshito IKEDA, Hiroyuki SAKAI, Morikazu SAGAWA, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.834-840
Special SectionPAPER
Functional Modules and the Design Technology
Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment
Junji ITOH, Tadayoshi NAKATSUKA, Takayuki YOSHIDA, Mitsuru NISHITSUJI, Tomoya UDA, Osamu ISHIKAWA, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.841-847
Special SectionPAPER
Functional Modules and the Design Technology
A Polyimide/Alumina-Ceramic Multilayer MIC Analog Phase Shifter with a Large Phase Shift
Hitoshi HAYASHI, Masahiro MURAGUCHI, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.848-855
Special SectionPAPER
Functional Modules and the Design Technology
Wide-Band Subharmonically Injection-Locked Oscillators Using Three-Dimensional MMIC Technology
Kenji KAMOGAWA, Ichihiko TOYODA, Tsuneo TOKUMITSU, Kenjiro NISHIKAWA, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.856-861
Special SectionPAPER
Functional Modules and the Design Technology
Design of a Quasi-Optical Oscillator Using a Grooved Mirror with a HEMT Array
Jongsuck BAE, Satoru SUGAWARA, Fumikazu TAKEI, Hiroshi KIKUYAMA, Tetsu FUJII, Koji MIZUNO, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.862-867
Special SectionPAPER
Functional Modules and the Design Technology
A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS
Katsue K. KAWAKYU, Yoshiko IKEDA, Masami NAGAOKA, Atsushi KAMEYAMA, Naotaka UCHITOMI, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.868-875
Special SectionPAPER
Semiconductor Devices and Amplifiers
Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET s and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA, Kazumi NISHIMURA, Takumi NITTONO, Yasuro YAMANE, Kimiyoshi YAMASAKI, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.876-881
Special SectionPAPER
Semiconductor Devices and Amplifiers
0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications
Naoki HARADA, Tamio SAITO, Hideyuki OIKAWA, Yoji OHASHI, Yuji AWANO, Masayuki ABE, Kohki HIKOSAKA, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.882-885
Special SectionPAPER
Semiconductor Devices and Amplifiers
Design of a K-Band Power Amplifier Using On-Wafer-Tuning Load-Pull Method
Minoru IDA, Masashi NAKATSUGAWA, |
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Summary | Full Text:PDF | |
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Vol.E81-C No.6
pp.886-891
Special SectionPAPER
Semiconductor Devices and Amplifiers
A High Power and Low Distortion Amplifier Module for Large Cell Base Station in Digital Cordless System
Morio NAKAMURA, Masahiro MAEDA, Shigeru MORIMOTO, Hiroyuki MASATO, Yukio NAKAMURA, Yorito OTA, |
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Summary | Full Text:PDF | |
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