An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process Mo ZHOUYi SHANYemin DONG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2020/06/01 Vol. E103-CNo. 6 ;
pp. 332-334 Type of Manuscript: BRIEF PAPER Category: Electromagnetic Theory Keyword: enhanced, well-changed, trigger voltage, uniformity,