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IEICE Trans

Keyword : velocity-saturation

Modeling and Simulation on Degradation of Submicron NMOSFET Current Drive due to Velocity-Saturation Effects
Katsumi TSUNENO Hisako SATO Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 161-165
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
degradation of drain current, velocity-saturation, Idso, lateral electric field, 
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