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Modeling of Dopant Diffusion in Silicon
Scott T. DUNHAM Alp H. GENCER Srinivasan CHAKRAVARTHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C
No. 6 ;
pp. 800-812
Type of Manuscript:
INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category:
Keyword:
dopant diffusion, point defects, silicon, interstitial, vacancy, dopant/defect pairing, coupled diffusion, pair diffusion, diffusivity, equilibrium concentration, metal diffusion, lattice Monte Carlo, | | | Summary | Full Text:PDF | |
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