Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State Hirobumi KAWASHIMARyo DANG (or DAN)
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-CNo. 6 ;
pp. 894-899 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: device simulation, non-isothermal, Si MOSFET, transient state, breakdown,