Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5 ;
pp. 968-972
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators Keyword: trap depth, RTN, time constants, poly gate depletion effect, surface potential variation, |