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IEICE Trans

Keyword : thin channel

Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer
Yasuyuki MIYAMOTO Takahiro GOTOW 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 304-307
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaN HEMT, simulation, short channel effect, thin channel, 
 Summary | Full Text:PDF