Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3 ;
pp. 474-480
Type of Manuscript:
INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
gate-drain capacitance, surface-potential based modeling, lateral field gradient, pocket-implant technology, |