IEICE Trans

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IEICE Trans

Keyword : surface states

2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/08/01 Vol. E93-C No. 8 ; pp. 1218-1224 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009) Category: GaN-based Devices Keyword: AlGaN/GaN HFET, collapse, virtual gate, pinning, surface states, simulation,
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Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al₂O₃ Insulated Gate Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2043-2050 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: GaN, AlGaN, leakage current, surface states, passivation,
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A Low Dark Current CCD Linear Image Sensor Masao YAMAWAKI Yuichi KUNORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/01/25 Vol. E80-C No. 1 ; pp. 154-159 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: CCD, image sensor, dark current, photodiode, storage, surface states, life time,
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