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IEICE Trans

Keyword : subthreshold-slope (S-factor)

Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology Using a Two-Dimensional Device Simulator
Tetsuo ENDOH Yuto MOMMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 1000-1005
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
double-gate MOSFET, Halo implantation, subthreshold-slope (S-factor), Vth, body potential, 
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