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IEICE Trans

Keyword : subthreshold characteristics

Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
Rimon IKENO Hiroshi ITO Kunihiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 806-811
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SOI MOSFET, device simulation, subthreshold characteristics, quantum mechanical effects, parameter fitting, substrate bias, 
 Summary | Full Text:PDF