Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3 ;
pp. 301-307
Type of Manuscript:
INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
TCAD, device modeling, silicon-on-insulator, strained-silicon, double-gate, |