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IEICE Trans

Keyword : static random access memory

A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs
Goichi ONO Yuki MORI Michiaki NAKAYAMA Yusuke KANNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/03/01
Vol. E97-C  No. 3 ; pp. 215-221
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
random telegraph noise, static random access memory, 
 Summary | Full Text:PDF