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IEICE Trans

Keyword : spin-transfer torque random access memory (STT-RAM)

Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
Masashi KAMIYANAGI Fumitaka IGA Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 602-607
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
spin-transfer torque random access memory (STT-RAM), tunnel magnetoresistance (TMR), spin-injection, magnetic tunnel junction (MTJ), CMOS, 
 Summary | Full Text:PDF