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Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile Christoph JUNGEMANN Stefan KEITH Bernd MEINERZHAGEN | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C
No. 8 ;
pp. 1228-1234
Type of Manuscript:
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation Keyword: silicon-germanium, full-band Monte Carlo, HBT, | | | Summary | Full Text:PDF | |
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