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IEICE Trans

Keyword : rapid thermal process

Characterization of 10 µm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application
Jeong-Yong PARK Jong-Hyun LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/11/01
Vol. E86-C  No. 11 ; pp. 2336-2340
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
porous silicon, rapid thermal process, insertion loss, return loss, 
 Summary | Full Text:PDF