Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices Kiyoshi TAKEUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-CNo. 4 ;
pp. 414-420 Type of Manuscript: INVITED PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: variability, reliability, random dopant fluctuation, random telegraph noise,