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IEICE Trans

Keyword : physically defined quantum dot

Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist
Shimpei NISHIYAMA Kimihiko KATO Yongxun LIU Raisei MIZOKUCHI Jun YONEDA Tetsuo KODERA Takahiro MORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2023/10/01
Vol. E106-C  No. 10 ; pp. 592-596
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
silicon qubit, electron beam lithography, negative-tone resist, physically defined quantum dot, 
 Summary | Full Text:PDF