Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C
No. 5 ;
pp. 717-723
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Keyword: high-k gate dielectrics, capping layer, HfO2, MgO, photoemission measurements, |