Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C
No. 4 ;
pp. 651-655
Type of Manuscript:
Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes Keyword: Ni-silicide, bi-layer capping, ternary phase, nano-scale MOSFET, |