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IEICE Trans

Keyword : millimeter-wave transistor

Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications
Jong-In SONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/01/25
Vol. E83-C  No. 1 ; pp. 115-121
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
chemical beam epitaxy, carbon doping, heterojunction bipolar transistor, millimeter-wave transistor, 
 Summary | Full Text:PDF