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IEICE Trans

Keyword : millimeter wave FETs

Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs
Tetsuya SUEMITSU Tetsuyoshi ISHII Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1283-1288
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high-speed devices, millimeter wave FETs, HEMT, indium phosphide, 
 Summary | Full Text:PDF