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IEICE Trans

Keyword : local oxidation of silicon

Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down
Shigeki KURODA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 145-149
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
simulation, local oxidation of silicon, stress redistribution, viscoelastic model, finite element method, 
 Summary | Full Text:PDF