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IEICE Trans

Keyword : intermediate layer

Improvements of Crystal Orientations of Wurtzite-Type GaN Thin Films Grown on Metal Surfaces
Yuichi SATO Toshifumi HISHINUMA Susumu SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6 ; pp. 1002-1006
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Development of Electro-Mechanical Devices (IS-EMD 2002))
Category: Emerging Technologies
Keyword: 
wurtzite structure, GaN, metal-foil, intermediate layer, SiO2, 
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