Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2020/06/01 Vol. E103-CNo. 6 ;
pp. 299-303 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Semiconductor Materials and Devices Keyword: high-k, gate insulator, interfacial layer, nitridation, N2-plasma, ECR, HfN,