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IEICE Trans

Keyword : impurity scattering

A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
Koichi FUKUDA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 281-287
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
device simulation, mobility, carrier screening, impurity scattering, MOSFET, 
 Summary | Full Text:PDF