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SIMOX Wafers Having Low Dislocation Density Formed with a Substoichiometric Dose of Oxygen Sadao NAKASHIMA Katsutoshi IZUMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C
No. 12 ;
pp. 1415-1420
Type of Manuscript:
Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Wafers Keyword: SIMOX, implantation, dislocation, oxygen, SOI, | | | Summary | Full Text:PDF | |
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