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IEICE Trans

Keyword : hydrogen-surface termination

RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
Makoto KASU Kenji UEDA Hiroyuki KAGESHIMA Yoshiharu YAMAUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1042-1049
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Wide Bandgap Devices
Keyword: 
diamond, field-effect transistors, RF characteristics, equivalent circuit, hydrogen-surface termination, 
 Summary | Full Text:PDF