Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-CNo. 10 ;
pp. 1289-1293 Type of Manuscript: INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: high-electron mobility transistor, hydrogen, reliability, InP, GaAs,