Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C
No. 5 ;
pp. 796-801
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Keyword: electrostatic discharge (ESD), non-snapback characteristics, gate-coupled effect, isolated parasitic capacitance, Bipolar-CMOS-DMOS process, |