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IEICE Trans

Keyword : gate-all-around MOSFET

Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate
Yefei ZHANG Zunchao LI Chuang WANG Feng LIANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/02/01
Vol. E99-C  No. 2 ; pp. 302-307
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
compact modeling, threshold voltage, strained silicon, gate-all-around MOSFET, Si1-xGex virtual substrate, 
 Summary | Full Text:PDF